BF1201WR - N-channel dual-gate PoLo MOS-FETs

NXP

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Datasheet Details

Part number	BF1201WR
Manufacturer	NXP
File Size	113.99 KB
Description	N-channel dual-gate PoLo MOS-FETs
Datasheet	BF1201WR_PhilipsSemiconductors.pdf

BF1201WR Product details

Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1201R marking code: LBp Fig.2 Simplified outline (SOT143R).3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.Integrated diodes between gates and source protect against excessive input voltage surges.The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.QUICK REFERENCE DATA SYMBOL VDS

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP

BF1201 - N-channel dual-gate PoLo MOS-FETs
BF1201R - N-channel dual-gate PoLo MOS-FETs
BF1202 - N-channel dual-gate PoLo MOS-FETs
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Published: Mar 23, 2005 |