BF1109WR Datasheet (NXP) - N-channel dual-gate MOS-FETs

BF1109WR, N-channel dual-gate MOS-FETs

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1109R marking code: NBp.

Fig.2 Simplified outline (SOT143R).

fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Integrated diodes between gates and sour

BF1109WR Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS