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BF1100 - Dual-gate MOS-FETs

NXP

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Datasheet Details

Part number	BF1100
Manufacturer	NXP
File Size	159.55 KB
Description	Dual-gate MOS-FETs
Datasheet	BF1100_PhilipsSemiconductors.pdf

BF1100 Product details

Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

Features

Specially designed for use at 9 to 12 V supply voltage.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

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Other Datasheets by NXP

BF1100R - Dual-gate MOS-FETs
BF1100WR - Dual-gate MOS-FET
BF1101 - N-channel dual-gate MOS-FETs
BF1101R - N-channel dual-gate MOS-FETs
BF1101WR - N-channel dual-gate MOS-FETs
BF1102 - Dual N-channel dual gate MOS-FET

Published: Mar 23, 2005 |