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BF1105R - N-channel dual-gate MOS-FETs

BF1105R Description

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997.
source drain gate 2 gate 1 APPLICATIONS. VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communicat.

BF1105R Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz.
* Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTI

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N-channel dual-gate MOS-FETs NXP
NXP BF1105R-like datasheet