BAV170 - Low-leakage double diode

NXP

The BAV170 by NXP is a Low-leakage double diode. Below is the official datasheet preview.

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BAV170 Low-leakage double diode by NXP - Datasheet Preview — Official preview page of the **BAV170** Low-leakage double diode datasheet (NXP).

Datasheet Details

Part number	BAV170
Manufacturer	NXP
File Size	72.40 KB
Description	Low-leakage double diode
Datasheet	BAV170_PhilipsSemiconductors.pdf
Additional preview pages of the BAV170 datasheet.

BAV170 Product details

Description

Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. Low-leakage current applications in surface mounted circuits. Note 1. ∗ = p : Made in Hong Kong.∗ = t : Made in Malaysia.∗ = W : Made in China.handbook, 4 columns 2 1 Top view 3 21 3 MAM108 Fig.1 Simplified outline (SOT

Features

Plastic SMD package.
Low leakage current: typ. 3 pA.
Switching time: typ. 0.8 µs.
Continuous reverse voltage: max. 75 V.
Repetitive peak reverse voltage: max. 85 V.
Repetitive peak forward current: max. 500 mA.

📁 BAV170 Similar Datasheet

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Other Datasheets by NXP

BAV10 - High-speed diode
BAV105 - High-speed diode
BAV199 - Low-leakage double diode
BAV199W - Low-leakage double diode
BAV20 - General purpose diodes
BAV21 - General purpose diodes

Published: Mar 26, 2005 |