BAS416 - Low-leakage diode

NXP

BAS416 Datasheet Preview — Preview of BAS416 PDF

Datasheet Details

Part number	BAS416
Manufacturer	NXP ↗
File Size	68.61 KB
Description	Low-leakage diode
Datasheet	BAS416-NXP.pdf

BAS416 Product details

Description

Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PACKAGE DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD323 LIMITING VALUES In accordance with the Absolute Maximum R

Features

Plastic SMD package.
Low leakage current: typ. 3 pA.
Switching time: typ. 0.8 µs.
Continuous reverse voltage: max. 75 V.
Repetitive peak reverse voltage: max. 85 V.
Repetitive peak forward current: max. 500 mA.

📁 BAS416 Similar Datasheet

BAS4 - CASE 318-08/ STYLE 8 SOT-23 TO-236AB (Motorola Inc)
BAS40 - Surface Mount Barrier Diode (Multicomp)
BAS40-00 - Small Signal Schottky Diodes (Vishay)
BAS40-00-G - Small Signal Schottky Diodes (Vishay)
BAS40-00-V - Small Signal Schottky Diodes (Vishay Siliconix)
BAS40-02L - Silicon Schottky Diode (Infineon)
BAS40-02V - Small Signal Schottky Diode (Vishay)
BAS40-02V-V-G - Small Signal Schottky Diode (Vishay)

Other Datasheets by NXP

BAS40H - General-purpose Schottky diode
BAS40L - Schottky barrier diode
BAS40W - Schottky barrier double diodes
BAS45A - Low-leakage diode
BAS45AL - Low-leakage diode
BAS101 - High Voltage Switching Diodes

Published: Feb 16, 2016 |