BAS40L Schottky barrier diode

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product speciﬁcation 2003 May 20 Philips Semiconductors Prod.
Planar Schottky barrier diode with an integrated guard ring for stress protection.

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Datasheet Specifications

Part number: BAS40L
Manufacturer: NXP ↗
File Size: 51.65 KB
Datasheet: BAS40L_PhilipsSemiconductors.pdf
Description: Schottky barrier diode

Features

* Low diode capacitance
* Low forward voltage
* Guard ring protected
* High breakdown voltage
* Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm)
* Boardspace 1.17 mm2 (approx. 10% of SOT23)
* Power dissipation comparable to SOT23.

Applications

* Ultra high-speed switching
* Voltage clamping
* Protection circuits
* Mobile communication, digital (still) cameras, PDAs and PCMCIA cards. Fig.1 Simplified outline (SOD882) and symbol. Marking code: S6. The marking bar indicates the cathode. LIMITING VALUES In acc

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BAS40L Schottky barrier diode NXP

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