Datasheet Details
Part number:
AFV141KHS, AFV141KH
Manufacturer:
File Size:
428.85 KB
Description:
Rf power ldmos transistors.
Note:
This datasheet PDF includes multiple part numbers: AFV141KHS, AFV141KH.
Please refer to the document for exact specifications by model.
AFV141KHS, AFV141KH, RF Power LDMOS Transistors
Freescale Semiconductor Technical Data Document Number: AFV141KH Rev.
0, 4/2016 RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These RF power devices are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L Band radars.
The devices are suitable for use in pulse applications.
Typical Pulse Performance: In 1200 1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, P
AFV141KHS Features
* Internally Input and Output Matched for Broadband Operation and Ease of Use
* Device Can Be Used in a Single
* Ended, Push
* Pull or Quadrature Configuration
* Qualified up to a Maximum of 50 VDD Operation
* High Ruggedness, Handles > 20:1 VSWR
* Integrated ESD Prot
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