AFV141KGS Datasheet - NXP

AFV141KGS RF Power LDMOS Transistors

Freescale Semiconductor Technical Data Document Number: AFV141KH Rev. 0, 4/2016 RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These RF power devices are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L Band radars. The devices are suitable for use in pulse applications. Typical Pulse Performance: In 1200 1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, P.

AFV141KGS Features

* Internally Input and Output Matched for Broadband Operation and Ease of Use

* Device Can Be Used in a Single

* Ended, Push

* Pull or Quadrature Configuration

* Qualified up to a Maximum of 50 VDD Operation

* High Ruggedness, Handles > 20:1 VSWR

* Integrated ESD Prot

AFV141KGS Datasheet (428.85 KB)