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PMWD18UN - Dual N-channel uTrenchMOS ultra low level FET

NXP Semiconductors

The PMWD18UN by NXP Semiconductors is a Dual N-channel uTrenchMOS ultra low level FET. Below is the official datasheet preview.

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PMWD18UN Dual N-channel uTrenchMOS ultra low level FET by NXP Semiconductors - Datasheet Preview — Official preview page of the PMWD18UN Dual N-channel uTrenchMOS ultra low level FET datasheet (NXP Semiconductors).

Datasheet Details

Part number	PMWD18UN
Manufacturer	NXP Semiconductors
File Size	118.90 KB
Description	Dual N-channel uTrenchMOS ultra low level FET
Datasheet	PMWD18UN_NXPSemiconductors.pdf
Additional preview pages of the PMWD18UN datasheet.

PMWD18UN Product details

Description

Dual common drain N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

Features

s Surface mounted package s Very low threshold s Low proﬁle s Fast switching. 1.3.

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Published: Apr 27, 2010 |