PMGD290XN - Dual N-channel mTrenchMOS extremely low level FET

NXP Semiconductors

The PMGD290XN by NXP Semiconductors is a Dual N-channel mTrenchMOS extremely low level FET. Below is the official datasheet preview.

Datasheet Details

Part number	PMGD290XN
Manufacturer	NXP Semiconductors
File Size	122.64 KB
Description	Dual N-channel mTrenchMOS extremely low level FET
Datasheet	PMGD290XN_NXPSemiconductors.pdf
Additional preview pages of the PMGD290XN datasheet.

Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage. 1.3.

📁 PMGD290XN Similar Datasheet

Other Datasheets by NXP Semiconductors

Published: Mar 25, 2010 |