PMGD280UN - Dual N-channel mTrenchMOS ultra low level FET

NXP Semiconductors

The PMGD280UN by NXP Semiconductors is a Dual N-channel mTrenchMOS ultra low level FET. Below is the official datasheet preview.

Datasheet Details

Part number	PMGD280UN
Manufacturer	NXP Semiconductors
File Size	120.56 KB
Description	Dual N-channel mTrenchMOS ultra low level FET
Datasheet	PMGD280UN_NXPSemiconductors.pdf
Additional preview pages of the PMGD280UN datasheet.

Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage. 1.3.

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Published: Mar 25, 2010 |