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PMDPB65UP - Dual P-Channel MOSFET

Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Trench MOSFET technology.
  • 1.8 V RDSon rated for low voltage gate drive.
  • 1 kV ElectroStatic Discharge (ESD) protection.
  • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm.
  • Exposed drain pad for excellent thermal conduction 1.3.

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Datasheet Details

Part number PMDPB65UP
Manufacturer NXP Semiconductors
File Size 202.95 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet PMDPB65UP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Trench MOSFET technology  1.8 V RDSon rated for low voltage gate drive  1 kV ElectroStatic Discharge (ESD) protection  Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm  Exposed drain pad for excellent thermal conduction 1.
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