PMDPB65UP - Dual P-Channel MOSFET

NXP Semiconductors

PMDPB65UP Datasheet Preview — Preview of PMDPB65UP PDF

Datasheet Details

Part number	PMDPB65UP
Manufacturer	NXP ↗ Semiconductors
File Size	202.95 KB
Description	Dual P-Channel MOSFET
Datasheet	PMDPB65UP-NXPSemiconductors.pdf

PMDPB65UP Product details

Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
1.8 V RDSon rated for low voltage gate drive.
1 kV ElectroStatic Discharge (ESD) protection.
Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm.
Exposed drain pad for excellent thermal conduction 1.3.

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Published: Aug 24, 2014 |