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BUK763R6-40C - N-channel TrenchMOS standard level FET

Description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Avalanche robust.
  • Suitable for standard level gate drive.
  • Suitable for thermally demanding environment up to 175°C rating 1.3.

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Datasheet Details

Part number BUK763R6-40C
Manufacturer NXP Semiconductors
File Size 373.29 KB
Description N-channel TrenchMOS standard level FET
Datasheet download datasheet BUK763R6-40C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 — 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Avalanche robust  Suitable for standard level gate drive  Suitable for thermally demanding environment up to 175°C rating 1.3 Applications  12V Motor, lamp and solenoid loads  High performance automotive power systems  High performance Pulse Width Modulation (PWM) applications www.DataSheet4U.
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