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BUK763R6-40C - N-channel MOSFET

General Description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

Key Features

  • AEC Q101 compliant.
  • Avalanche robust.
  • Suitable for standard level gate drive.
  • Suitable for thermally demanding environment up to 175°C rating 1.3.

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Full PDF Text Transcription for BUK763R6-40C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK763R6-40C. For precise diagrams, and layout, please refer to the original PDF.

BUK763R6-40C N-channel TrenchMOS standard level FET Rev. 04 — 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-chann...

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duct profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Avalanche robust  Suitable for standard level gate drive  Suitable for thermally demanding environment up to 175°C rating 1.

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Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo BUK763R6-40C N-channel TrenchMOS standard level FET NXP Semiconductors

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