BLD6G21L-50 Datasheet (NXP Semiconductors) - TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

BLD6G21L-50, TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology.

This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz.

The main and peak device, input splitter and output co

BLD6G21L-50 Features

* I Typical TD-SCDMA performance at frequencies from 2010 MHz to 2025 MHz: N Average output power = 8 W N Power gain = 13.5 dB N Efﬁciency = 42 % I Fully optimized integrated Doherty concept: N integrated asymmetrical power splitter at input N integrated power combiner N peak biasing down to 0 V N low