Datasheet4U Logo Datasheet4U.com

NTE555 Datasheet - NTE

NTE555 Silicon Pin Diode UHF/VHF Detector

NTE555 Features

* D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat

* Whisker” or “S

* Bend” Contact D Very Low Capacitance: 1.0pF D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200nA (Max)

NTE555 Datasheet (20.43 KB)

Preview of NTE555 PDF
NTE555 Datasheet Preview Page 2

Datasheet Details

Part number:

NTE555

Manufacturer:

NTE

File Size:

20.43 KB

Description:

Silicon pin diode uhf/vhf detector.

📁 Related Datasheet

NTE55 Silicon Complementary Transistors (NTE)

NTE5500 Silicon Controlled Rectifier (NTE)

NTE5509 Silicon Controlled Rectifier (NTE)

NTE5511 Silicon Controlled Rectifier (NTE)

NTE5513 Silicon Controlled Rectifier (NTE)

NTE5514 Silicon Controlled Rectifier (NTE)

NTE5516 Silicon Controlled Rectifier (NTE)

NTE5517 Silicon Controlled Rectifier (NTE)

TAGS

NTE555 Silicon Pin Diode UHF VHF Detector NTE

NTE555 Distributor