NTE55 - Silicon Complementary Transistors

Product Overview

NTE

NTE55 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE55

Datasheet Details

Part number	NTE55
Manufacturer	NTE
File Size	23.30 KB
Description	Silicon Complementary Transistors
Datasheet	NTE55 Datasheet
Note	This datasheet PDF includes multiple part numbers: NTE55, NTE54. Please refer to the document for exact specifications by model.
Additional preview pages of the NTE55 datasheet.

Product details

Description

The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications.

Features

D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain.
Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 150V Collector.
Base Voltage, VCBO.

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Published: Aug 18, 2016 |