NTE29 - Silicon Complementary Transistors

Product Overview

NTE

NTE29 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE29

Datasheet Details

Part number	NTE29
Manufacturer	NTE
File Size	24.22 KB
Description	Silicon Complementary Transistors
Datasheet	NTE29 Datasheet
Additional preview pages of the NTE29 datasheet.

Product details

Description

The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.

Features

D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.
. . 80V Emitter.

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Other Datasheets by NTE

NTE290 - Silicon Complementary Transistors
NTE2900 - N-Channel MOSFET
NTE2902 - N-Channel MOSFET
NTE2903 - N-Channel MOSFET
NTE2904 - N-Channel MOSFET
NTE2905 - P-Channel MOSFET

Published: May 9, 2005 |