NTE2903 - N-Channel MOSFET

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NTE

Part number	NTE2903
Manufacturer	NTE
File Size	68.15 KB
Description	N-Channel MOSFET
Datasheet	NTE2903 Datasheet
Additional preview pages of the NTE2903 datasheet.

D Low Drain.
Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance: |yfs| = 3.5S Typ D Low Leakage Current: IDSS = 100A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain.
Source Voltage, VDSS.
. 500V Drain.
Gate Voltage (RGS = 20k), VDGR.

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Published: Jan 23, 2020 |