MJ10012 - NPN Silicon Power Darlington Transistor

NTE

The MJ10012 by NTE is a NPN Silicon Power Darlington Transistor. Below is the official datasheet preview.

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MJ10012 NPN Silicon Power Darlington Transistor by NTE - Datasheet Preview — Official preview page of the **MJ10012** NPN Silicon Power Darlington Transistor datasheet (NTE).

Datasheet Details

Part number	MJ10012
Manufacturer	NTE
File Size	54.93 KB
Description	NPN Silicon Power Darlington Transistor
Datasheet	MJ10012-NTE.pdf
Additional preview pages of the MJ10012 datasheet.

MJ10012 Product details

Description

The MJ10012 is high voltage, high current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications.

Features

D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 400V Collector.
Emitter Voltage (RBE = 273 ), VCER.
. 550V Collector.
Base Voltage, VCBO.

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Published: Jun 24, 2019 |