NSi6601M Datasheet (NOVOSENSE) - Single-Channel Isolated Gate Driver

NSi6601M, Single-Channel Isolated Gate Driver

14 6.1.

INSULATION AND SAFETY RELATED SPECIFICATIONS 14 6.2.

INSULATION SPECIFICATION PER DIN VDE V 0884-11:2017-01 FOR SOP8(150 MIL) PACKAGE 15 6.3.

SAFETY LIMITING VALUES FOR SOP8(150 MIL) PACKAGE 16 6.4.

REGULATORY INFORMATION FOR SOP8(150 MIL) PACKAGE 17 6.5.

INSULATION SPECIFICATION PER DI

NSI6601M Single-Channel Isolated Gate Driver Datasheet (EN) 1.3 Product Overview The NSI6601M is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications.

It provides split output that controls the rise and fall times individually.

It can source and sink 5A peak current.

The NSI6601M is available in SOP8 or SOW8 package, and can support 3000VRMS and 5700VRMS isolation per UL1577 respectively.

System robustness is supported by 150kV/μs min

NSi6601M Features

* Isolated single-channel driver

* Miller Clamp options (NSI6601MB/MC/WC)

* Input side supply voltage: 3.1V to 17V

* Driver side supply voltage: up to 32V with 9V, and 12V UVLO options

* 5A peak source and sink output current

* Minimum CMTI: ±150kV/μs

* 80ns typical propa