UPD46128512-X Datasheet - NEC

UPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

The μPD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function. The μPD46128512-X is fabricated with advanced CMOS technology using one-transistor memory ce.

UPD46128512-X Features

* 8,388,608 words by 16 bits organization

* Asynchronous page read mode

* Synchronous read and write mode

* Burst length: 8 words / 16 words / continuous

* Clock latency: 5, 6, 7, 8, 9, 10

* Burst sequence: Linear burst

* Max clock frequency: 1

UPD46128512-X Datasheet (921.06 KB)

UPD46128512-X Datasheet Preview — Preview of UPD46128512-X PDF

Datasheet Details

Part number:

UPD46128512-X

Manufacturer:

NEC

File Size:

921.06 KB

Description:

128m-bit cmos mobile specified ram 8m-word by 16-bit extended temperature operation.

📁 Related Datasheet

UPD46128953-X 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION (NEC)

UPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT (NEC)

UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION (NEC)

uPD46184095B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION (Renesas)

uPD46184182B 18M-BIT DDR II SRAM 2-WORD BURST OPERATION (Renesas)

uPD46184184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION (Renesas)

uPD46184185B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION (Renesas)

uPD46184362B 18M-BIT DDR II SRAM 2-WORD BURST OPERATION (Renesas)

TAGS

UPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD 16-BIT EXTENDED TEMPERATURE OPERATION NEC

UPD46128512-X Distributor