UPD4164-1 Datasheet (NEC) - 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY

UPD4164-1, 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY

NEe Microcomputers, Inc.

65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,.

PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR I PTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply.

The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent.

The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides high storage cell density, high

UPD4164-1 Features

* Multiplexed address inputs permit the /lPD4164 to be packaged in the standard 16 pin dual-in-line package. The 16 pin package provides the highest system bit densities and is compatible with widely available automated handling equipment.

* High Memory Density

* MUltiplexed Address I