UPD416 Datasheet (NEC) - 16K x 1-Bit DYNAMIC NMOS RAM

UPD416, 16K x 1-Bit DYNAMIC NMOS RAM

NEe Microcomputers, Inc.

18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P.

PD416 1 f' PD416 2 f'PD416 3 J.L PD416 5 DESCPIIIPTION The NECI1PD416 is a 16384 words by 1 bit Dynamic MOS RAM.

It is designed for memory applications where very low cost and large bit storage are important design objectives.

The I1PD416 .is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance.

The use of dynamic