UPA836TF Datasheet (NEC) - NPN SILICON EPITAXIAL TRANSISTOR

UPA836TF, NPN SILICON EPITAXIAL TRANSISTOR

The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

PACKAGE DRAWINGS (Unit:mm) 2.10±0.1 1.25±0.1 0.22 *0.05 +0.1 1 Q2 : NF = 1.7 dB TYP.

@f = 2 GHz, VCE = 1 V, IC = 3 mA * High gain Q1 : |S21e|2 = 8.5 dB TYP.

@f =

UPA836TF Features

* ON-CHIP TRANSISTORS Q1 3-pin small mini mold part No. 2SC4959 Q2 2SC5193 PIN CONFIGURATION (Top View) B1 E2 5 B2 4 Q2 2 E1 3 C2 The µPA833TF features the Q1 and Q2 in inverted positions. 6 Q1 1 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 pcs) Taping products (3 kpcs/reel) PACKI