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UPA832TF - NPN SILICON EPITAXIAL TRANSISTOR

Description

The µPA832TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

Q2 : NF = 1.5 dB TYP.

High gain Q1 : |S21e|2 = 9.0 dB TYP.

Features

  • ON-CHIP.

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Datasheet Details

Part number UPA832TF
Manufacturer NEC
File Size 65.55 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet UPA832TF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET µPA832TF NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Silicon Transistor DESCRIPTION The µPA832TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. PACKAGE DRAWINGS (Unit:mm) 2.10±0.1 1.25±0.1 0.22−0.05 +0.1 1 Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA Q2 : |S21e|2 = 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA • 2 different transistors on-chip (2SC4226, 2SC4959) • 6-pin thin-type small mini mold package 0.65 Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA 1.30 • Low noise 2.00±0.2 0.65 2 3 0.60±0.
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