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UPA2750GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Description

The µPA2750GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management application of notebook computers.

8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.

0.05

Features

  • Dual chip type.
  • Low on-state resistance RDS(on)1 = 15.5 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 23.9 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A).
  • Low Ciss: Ciss = 1040 pF TYP. (VDS = 10 V, VGS = 0 V).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 0.8 1.8 Max. 1.44 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M.

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Datasheet Details

Part number UPA2750GR
Manufacturer NEC
File Size 67.76 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2750GR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2750GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2750GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management application of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 15.5 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 23.9 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A) • Low Ciss: Ciss = 1040 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 0.8 1.8 Max. 1.44 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.
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