UPA2719AGR - P-CHANNEL POWER MOS FET

Product Overview

Renesas

Datasheet Details

Part number	UPA2719AGR
Manufacturer	Renesas
File Size	302.71 KB
Description	P-CHANNEL POWER MOS FET
Datasheet	UPA2719AGR Datasheet
Additional preview pages of the UPA2719AGR datasheet.

Product details

Description

The μ PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit.

Features

Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS =.
10 V, ID =.
5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS =.
4.5 V, ID =.
5.0 A).
Low input capacitance Ciss = 2010 pF TYP.
Built-in gate protection diode.
Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN. 14 5.37 MAX. 6.0 ±0.3 4.4 +0.10.
0.05 0.15 1.27 0.78 MAX. 0.40 +0.10.
0.05 0.12 M 0.5 ±0.2 0.8 0.10.

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Published: Jan 21, 2016 |