Description
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.
Features
- Dual MOS FET chips in small package.
- 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX. ) (VGS = 4.5 V, ID = 3.5 A)
1.44
RDS(on)2 = 32 mΩ (MAX. ) (VGS = 2.5 V, ID = 3.5 A)
1.8 Max. 1 5.37 Max. 4
6.0 ±0.3 4.4
+0.10.
- 0.05.
- Low Ciss
0.8
Ciss = 750 pF Typ. 0.05 Min.
- Small and surface mount package (Power SOP8)
0.15.
- Built-in G-S protection diode
0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10.
- 0.05
Ordering i.
UPA1757_NEC.pdf
