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UPA1756 - N-Channel Power MOSFET

Description

This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.

8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.

0.05

Features

  • Dual MOS FET chips in small package.
  • 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A).
  • Low Ciss Ciss = 800 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 0.8 1.8 Max. 1.44 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M.

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Datasheet Details

Part number UPA1756
Manufacturer NEC
File Size 64.11 KB
Description N-Channel Power MOSFET
Datasheet download datasheet UPA1756 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1756 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 FEATURES • Dual MOS FET chips in small package • 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Low Ciss Ciss = 800 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 0.8 1.8 Max. 1.44 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.
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