NP88N04MHE, NP88N04CHE - MOS FIELD EFFECT TRANSISTOR

NEC

Datasheet Details

Part number	NP88N04MHE, NP88N04CHE
Manufacturer	NEC
File Size	284.06 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP88N04CHE_NEC.pdf
Note	This datasheet PDF includes multiple part numbers: NP88N04MHE, NP88N04CHE. Please refer to the document for exact specifications by model.

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A).
Low input capacitance Ciss = 7300 pF TYP.
Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales re.

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Published: Feb 20, 2012 |