NE8500100 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEC

Description

PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET .
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.

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Datasheet Specifications

Part number: NE8500100
Manufacturer: NEC
File Size: 41.14 KB
Datasheet: NE8500100_NEC.pdf
Description: 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Features

* Class A operation
* High power output
* High reliability PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm) 65 170 146 SELECTION CHART 100 PERFORMANCE SPECIFIED PART NUMBER FORM Pout (
* ) (dBm) GL (
* ) (dB) USABLE FREQUENCY (GHz) 2.0 to 10 100 100 780 640

Applications

* and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest relia

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NE8500100 C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET NEC

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