Datasheet4U Logo Datasheet4U.com

NE4210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE4210S01 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

NE4210S01 Features

* Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE4210S01-T1 NE4210S01-T1B Marking L Supplying Form Tape & reel 1 kp/reel Tape & reel

📥 Download Datasheet

Preview of NE4210S01 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE4210S01
Manufacturer
NEC
File Size
65.24 KB
Datasheet
NE4210S01_NEC.pdf
Description
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

📁 Related Datasheet

  • NE41137 - N-Channel GaAs Dual Gate MES FET (California Eastern Laboratories)
  • NE4558 - Dual general-purpose operational amplifier (Philips)
  • NE46234 - NPN SILICON RF TRANSISTOR (CEL)

📌 All Tags

BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC
NEC NE4210S01-like datasheet