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NE46234 - NPN SILICON RF TRANSISTOR

General Description

The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).

This low distortion characteristic makes it suitable for CATV, tele-communication and other use.

It employs surface mount type plastic package, power mini mold (SOT-89).

Key Features

  • Low distortion, low voltage: IM2 = 55 dBc TYP. , IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75.
  • Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate) 2.
  • Small package : 3-pin power mini mold package.

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Datasheet Details

Part number NE46234
Manufacturer CEL
File Size 162.64 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet NE46234 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (SOT-89). FEATURES • Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75 • Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm  0.