Datasheet4U Logo Datasheet4U.com

D45128841G5 UPD45128841G5

D45128841G5 Description

www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL .
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,3.

D45128841G5 Features

* Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
* Pulsed interface
* Possible to assert random column address in every cycle
* Quad internal banks controlled by BA0(A13) and BA1(A12)
* Byte control (×16) by LDQM and UDQM

📥 Download Datasheet

Preview of D45128841G5 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
D45128841G5
Manufacturer
NEC
File Size
855.93 KB
Datasheet
D45128841G5_NEC.pdf
Description
UPD45128841G5

📁 Related Datasheet

  • D4515 - Low-frequency amplification shell rated bipolar transistors (JILIN SINO)
  • D4503B - Hex 2 State Buffer (ETC)
  • D452 - N-Channel MOSFET (Alpha & Omega Semiconductors)
  • D452A - N-Channel MOSFET (VBsemi)
  • D4535D - Standard Recovery Diode (nELL)
  • D454A - N-Channel 40V MOSFET (VBsemi)
  • D4556 - Single-supply Dual High Current Operational (Sumc)
  • D4558 - Dual Operational Amplifier (DMS Microelectronic)

📌 All Tags

UPD45128841G5 NEC
NEC D45128841G5-like datasheet