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2SJ607 Datasheet - NEC

2SJ607 MOS FIELD EFFECT TRANSISTOR

2SJ607 Features

* Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS =

* 10 V, ID =

* 42 A) RDS(on)2 = 16 mΩ MAX. (VGS =

* 4.0 V, ID =

* 42 A)

* Low input capacitance: Ciss = 7500 pF TYP. (VDS =

* 10 V, VGS = 0 V)

* Built-in gate protection diode No

2SJ607 Datasheet (114.56 KB)

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Datasheet Details

Part number:

2SJ607

Manufacturer:

NEC

File Size:

114.56 KB

Description:

Mos field effect transistor.

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2SJ607 MOS FIELD EFFECT TRANSISTOR NEC

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