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2SJ605 - MOS FIELD EFFECT TRANSISTOR

NEC

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Datasheet Details

Part number	2SJ605
Manufacturer	NEC
File Size	120.10 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ605_NEC.pdf

2SJ605 Product details

Description

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =.
10 V, ID =.
33 A) RDS(on)2 = 31 mΩ MAX. (VGS =.
4.0 V, ID =.
33 A).
Low input capacitance ! Ciss = 4600 pF TYP. (VDS =.
10 V, VGS = 0 A).
Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

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Published: Jul 12, 2007 |