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NCE30H21 N-Channel Enhancement Mode Power MOSFET

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Description

Pb Free Product http://www.ncepower.com NCE30H21 NCE N-Channel Enhancement Mode Power MOSFET .
The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
NCE30H21
Manufacturer
NCEPOWER
File Size
324.15 KB
Datasheet
NCE30H21-NCEPOWER.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology

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