NCE30H11BK N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com NCE30H11BK NCE N-Channel Enhancement Mode Power MOSFET .
The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: NCE30H11BK
Manufacturer: NCE Power Semiconductor
File Size: 424.29 KB
Datasheet: NCE30H11BK-NCEPowerSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =110A Schematic diagram RDS(ON) =3.2mΩ (typical) @ VGS=10V RDS(ON) =4.0mΩ (typical) @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package fo

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NCE30H11BK N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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