NCEP039N10 - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number: NCEP039N10
Manufacturer: NCE Power Semiconductor
File Size: 334.43 KB
Datasheet: NCEP039N10-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

NCEP039N10 Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =135A RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
Pb-free Mold Compound 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP039N10 NCEP039N10 TO-220 - -.

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Published: Oct 25, 2024 |