Datasheet Details
- Part number
- NCEP023N10T
- Manufacturer
- NCE Power Semiconductor
- File Size
- 547.00 KB
- Datasheet
- NCEP023N10T-NCEPowerSemiconductor.pdf
- Description
- N-Channel Power MOSFET
NCEP023N10T Description
NCEP023N10T NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
NCEP023N10T Features
* VDS =100V,ID =280A
RDS(ON)=1.85mΩ , typical@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
100% UIS TESTED! 100% ∆Vds TESTED!
TO-247
Schematic Diagram
Package Marking and Ordering
NCEP023N10T Applications
* that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material
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