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NCE3012S P-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com Pb Free Product NCE3012S NCE P-Channel Enhancement Mode Power MOSFET .
The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
NCE3012S
Manufacturer
NCE Power Semiconductor
File Size
369.90 KB
Datasheet
NCE3012S-NCEPowerSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

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