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NCE20PK0402J - P-Channel Enhancement Mode Power MOSFET

Description

The NCE20PK0402J uses advanced trench technology to provide excellent RDS(ON), low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Features

  • MOSFET.
  • VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160mΩ @ VGS=-1.8V Schottky Diode.
  • VKA(V) = 20V, IF = 2A, VF.

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Datasheet Details

Part number NCE20PK0402J
Manufacturer NCE Power Semiconductor
File Size 315.52 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE20PK0402J Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE20PK0402J Integrated P-Channel Enhancement Mode Power MOSFET and Schottky Diode Description The NCE20PK0402J uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. General Features MOSFET ● VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160mΩ @ VGS=-1.8V Schottky Diode ● VKA(V) = 20V, IF = 2A, VF<0.45V@0.
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