NCE20PK0402J P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com Pb Free Product NCE20PK0402J Integrated P-Channel Enhancement Mode Power MOSFET and Schottky Diode .
The NCE20PK0402J uses advanced trench technology to provide excellent RDS(ON), low gate charge.

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Datasheet Specifications

Part number: NCE20PK0402J
Manufacturer: NCE Power Semiconductor
File Size: 315.52 KB
Datasheet: NCE20PK0402J-NCEPowerSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* MOSFET
* VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160mΩ @ VGS=-1.8V Schottky Diode
* VKA(V) = 20V, IF = 2A, VF

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NCE20PK0402J P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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