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NCE20P45Q - P-Channel Enhancement Mode Power MOSFET

Description

The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram Pin Assignment.

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Datasheet Details

Part number NCE20P45Q
Manufacturer NCE Power Semiconductor
File Size 304.34 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE20P45Q Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE20P45Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Pin Assignment Application ● Load switch ● Battery protection Package Marking and Ordering Information DFN 3.3x3.3 EP top view Device Marking NCE20P45Q Device NCE20P45Q Device Package DFN 3.3x3.
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