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NCE20NP1006S - N and P-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) and low gate charge .

high side switch, and for a host of other applications.

Features

  • N-Channel N-channel P-channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V.
  • P-Channel VDS = -20V,ID = -6A Only Schematic diagram RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.5V.
  • High power and current handing capability Use.
  • Lead free product is acquired.
  • Surface mount package.
  • Pb free terminal plating.
  • RoHS compliant.
  • Halogen free times Marking and pin assignment.

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Datasheet Details

Part number NCE20NP1006S
Manufacturer NCE Power Semiconductor
File Size 453.10 KB
Description N and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE20NP1006S Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com NCE20NP1006S N and P-Channel Enhancement Mode Power MOSFET Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel N-channel P-channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -6A Only Schematic diagram RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.
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