20NP1006S N and P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com NCE20NP1006S N and P-Channel Enhancement Mode Power MOSFET .
The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: 20NP1006S
Manufacturer: NCE Power Semiconductor
File Size: 411.34 KB
Datasheet: 20NP1006S-NCEPowerSemiconductor.pdf
Description: N and P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V
* P-Channel VDS = -20V,ID = -6A RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package
* Pb fre

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20NP1006S and P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

NCE Power Semiconductor 20NP1006S-like datasheet