Datasheet Details
- Part number
- 20N03HL
- Manufacturer
- Motorola
- File Size
- 206.39 KB
- Datasheet
- 20N03HL_Motorola.pdf
- Description
- MTD20N03HL
20N03HL Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Moun.20N03HL Features
* d by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed rea20N03HL Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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