MTP12N10E Datasheet - Motorola

MTP12N10E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switc.

MTP12N10E Features

* milar to those of Figure 11 are present. Full or half-bridge PWM DC motor controllers are common applications requiring CSOA data. Device stresses increase with increasing rate of change of source current so dIs/dt is specified with a maximum value. Higher values of dIs/dt require an appropriate der

MTP12N10E Datasheet (239.73 KB)