MTP10N10E Datasheet (Motorola)

MTP10N10E, TMOS POWER FETs

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes.

These new energy efficient devices also offer drain to source diodes with fast recovery times.

Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particu

MTP10N10E Features

* during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain

* to

* source voltage that the device must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR